Low-Noise Amplifier 26-30GHz

Product No: WEA2630L45GDownload Datasheet

  • Applications:5G,Satellite
  • Maturity:silicon proven
  • Foundry:GF
  • Geometry (nm):45nm
  • Process Node:45RFSOI

The WEA2630L45G is an integrated low-noise amplifier designed for Microwave Backhaul,5G Communications and mm-Wave Wireless Phase Arrays receiver applications. The WEA2630L45G operates between 26 and 30GHz with a signal gain of 18 dB, noise figure of 2.9 dB and current consumption 35 mA from 1.5V supply. The WEA2630L45G is fabricated on GlobalFoundries 45RFSOI process occupying a total silicon area of 1.6mm x 1.5mm.

Key Features
  • Small signal gain: 18 dB
  • Low noise figure: 2.9 dB
  • Current consumption: 35 mA @ 1.5 V
  • Shut-down current: 0.8 mA
  • Input/output impedance internally matched to 50 Ω
  • 3.2 dBm RX Input Referred IP3
  • Single DC supply: 1.5V
  • Area:1.6 x1.5mm
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