Power Amplifier 76-81GHz

Product No: WEA7681P22GDownload Datasheet

  • Applications:Microwave Backhaul, 5G Communications, mm-Wave Wireless Phase Arrays
  • Maturity:silicon proven
  • Foundry:GF
  • Geometry (nm):22nm
  • Process Node:22FDX

The WEA7681P22G is an integrated power amplifier designed for Microwave Backhaul,5G Communications and mm-Wave Wireless Phase Arrays receiver applications. The WEA7681P22G operates between 76 and 81 GHz and is powered from 1.5V and 3V supplies. The WEA7681P22G provides saturated output power of 16 dBm. The WEA7681P22G is fabricated on GlobalFoundries 22FDX process occupying a total silicon area of 1.3 mm x 1.5mm.

Key Features
  • Integrated Matching Network
  • Integrated Inductors
  • 5 V and 3.0V Supply Voltage
  • 14 dB Gain
  • Frequency range 76GHz-81GHz
  • TX PAE = 13% at 16 dBm Output Power
  • 14 dBm TX Output 1dB Compression Point
  • Area: 1.3mm x 1.5mm
  • Programmable BIAS
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