Power Amplifier 130-170GHz

Product No: WEA130170P55S

  • Applications:Microwave Backhaul, 5G Communications
  • Maturity:silicon proven
  • Foundry:STMicro
  • Geometry (nm):55nm
  • Process Node:ST BiCMOS55

The WEA130170P55S consists of four cascaded differential amplifying stages. The first three stages are cascode stages,while the final one is a common emitter stage. Transformers are used as matching networks between the stages. An output balun is used to transform the final stage differential output to a single ended. The scaling of the devices maximize the power amplifier’s linearity performance.

Key Features
  • Gain:24dB
  • NF:12.6dB@170GHz
  • OIP3:16.2dBm
  • 1Dbocp:6.5dBm
  • PAE@0dBm:0.41%
  • PAE@1dBCP:1.8%
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