1.0V Bandgap Voltage Reference
Product No: WEA10BG45G
- Applications:General Purpose applications
- Maturity:silicon proven
- Foundry:GF
- Geometry (nm):45nm
- Process Node:45RFSOI
The WEA10BG45 consists of the bandgap core which produces a constant current Iconst=100uA and a constant voltage Vconst=300mV. The voltage ΔVbe is PTAT voltage which is sensing due to O2 at the output Vptat. It is specified over the −40°C to +120°C temperature range.
| PSRR | Vptat(dB) | Vconst(dB) |
| 1K | -37.3 | -37 |
| 100K | -36.6 | -37 |
| 1M | -24 | -35 |
| 10M | -16 | -19 |
Key Features
- PTAT voltage: 375mV to 550mV
- PTAT current: 75uA to 106uA
- Constant Voltage: 185ppm/0C
- Constant Current: 25ppm/0C
- Area/Disipation: 215um x 100um/520uA (Ptat)-744uA(Const)
- Integrated Noise (100Hz-100MHz):
- Iconst=79pA/sqrt(Hz)
- Vconst=407nV/sqrt(Hz)
- Iptat=84pA/sqrt(Hz)
- Vptat=433nV/sqrt(Hz)
- Noise at 10KHz:
- Iconst=15pA
- Vconst=77nV
- Iptat 14pA
- Vptat=81nV
