Temperature Sensor 1.8 V

Product No: WEA10TS45Download Datasheet

  • Applications:Microwave Backhaul 5G and mm-Wave Wireless Infrastructure Satellite Communications
  • Maturity:silicon proven
  • Foundry:GF
  • Geometry (nm):45nm
  • Process Node:45RFSOI

The WEA10TS45 temperature sensor operates from -40 oC to 140 oC and produces an output voltage from 0 to 1.2 V. The core of the sensor can be detached from the processing unit and placed to the silicon area of interest. The sensor has an absolute accuracy of +/- 5oC and after offset and gain calibration the maximum residual error is below +/-1.25 oC. The control is done through two 16 digital control signal bus in a linear way. The sensor operates from a supply of 1.8 V. It requires 1.0 V digital supply for the calibration control.

Key Features
  • Absolute accuracy: +/- 5 oC uncalibrated, +/- 1.25 oC calibrated
  • Voltage slope: 4.72 – 6.78 mV/oC (16 steps)
  • Voltage offset: +/- 90.0mV (16 steps)
  • Output voltage: 0V – 1.2V (-40 oC / 140 oC)
  • Area: 0.016 mm2 (core),0.161 mm2 (processing)
  • Dissipation: 365 uW
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